pa ge:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? excellent h f e linearity ? high h fe ? low noise ? complemen t ary to k t a2014 maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 60 v collector - emitter v ol t age v ceo 50 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 0.15 a collector power dissi p ation p c 0. 1 w junction t empe r ature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherwise specified ) parameter symbol t es t condit i ons m in m ax u nit collector - base breakd o w n v o l t age v cbo i c = 10 0 a, i e =0 60 v collector - emitter bre a kd o w n v ol t age v ceo i c = 1 ma, i b =0 50 v emitter - base b r eakd o w n v o l t age v ebo i e = 10 0 a, i c =0 5 v collector cut - off current i cbo v cb =60 v , i e = 0 0.1 a emitter cut - off current i ebo v eb =5 v , i c =0 0.1 a dc c urr e nt gain h fe v ce = 6 v , i c = 2 ma 70 700 collecto r - emitter satu r ation v o l t age v cesat i c =100ma, i b = 10ma 0.25 v t r a n s ition fr e qu e n c y f t v ce =10 v , i c = 1ma 80 mhz collector output ca p aci t anc e c ob v ce =10 v , i e =0, f=1mhz 3.5 pf noise figure nf v ce = 6 v ,i e =0. 1 ma, f=1khz, r g = 10 k? 10 db classification of h fe rank o y gr bl range 70 - 1 40 120 - 240 200 - 400 350 - 700 marking lo ly lgr lbl k t c4075 ( np n ) 1. base 2. emitter sot - 23 3. collecto
pa ge:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. KTC4075 typical characteristics
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